? semiconductor components industries, llc, 2008 march, 2008 - rev. 0 1 publication order number: NTMD4184PF/d NTMD4184PF power mosfet and schottky diode -30 v, -4.0 a, single p-channel with 20 v, 2.2a, schottky barrier diode features ? fetky surface mount package saves board space ? independent pin-out for mosfet and schottky allowing for design flexibility ? low r ds(on) mosfet and low v f schottky to minimize conduction losses ? optimized gate charge to minimize switching losses ? this is a pb-free device applications ? disk drives ? dc-dc converters ? printers mosfet maximum ratings (t j = 25 c unless otherwise stated) rating symbol value unit drain-to-source voltage v dss -30 v gate-to-source voltage v gs 20 v continuous drain current r ja (note 1) steady state t a = 25 c i d -3.3 a t a = 70 c -2.6 power dissipation r ja (note 1) t a = 25 c p d 1.6 w continuous drain current r ja (note 2) t a = 25 c i d -2.3 a t a = 70 c -1.8 power dissipation r ja (note 2) t a = 25 c p d 0.77 w continuous drain current r ja t < 10 s (note 1) t a = 25 c i d -4.0 a t a = 70 c -3.2 power dissipation r ja t < 10 s (note 1) t a = 25 c p d 2.31 w pulsed drain current t a = 25 c, t p = 10 s i dm -10 a operating junction and storage temperature t j , t stg -55 to +150 c source current (body diode) i s -1.3 a lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c schottky maximum ratings (t j = 25 c unless otherwise stated) peak repetitive reverse voltage v rrm 20 v dc blocking voltage v r 20 v average rectified forward current, (note 1) steady state i f 2.2 a t < 10 s 3.2 http://onsemi.com device package shipping ? ordering information NTMD4184PFr2g soic-8 (pb-free) 2500/tape & reel soic-8 case 751 style 18 4184pf = device code a = assembly location y = year ww = work week = pb-free package ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. 1 8 4184pf ayww 1 8 marking diagram & pin assignment aasg ccdd g d p-channel mosfet s c a schottky diode -30 v 20 v 165 m @ -4.5 v 95 m @ -10 v 2.2 a r ds(on) max 0.58 v i d max v (br)dss p-channel mosfet schottky diode v r max i f max v f max -4.0 a
NTMD4184PF http://onsemi.com 2 thermal resistance maximum ratings parameter mosfet & schottky symbol max unit junction-to-ambient C steady state (note 1) r ja 79 c/w junction-to-ambient C t 10 s steady state (note 1) r ja 54 junction-to-foot (drain) equivalent to r jc r jf 50 junction-to-ambient C steady state (note 2) r ja 163 1. surface-mounted on fr4 board using 1 inch sq pad size, 1 oz cu. 2. surface-mounted on fr4 board using the minimum recommended pad size. electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol test condition min typ max unit off characteristics drain-to-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a -30 v drain-to-source breakdown voltage temperature coefficient v (br)dss /t j 30 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = -24 v t j = 25 c -1.0 a t j = 125 c -10 gate-to-source leakage current i gss v ds = 0 v, v gs = 20 v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a -1.0 -3.0 v negative threshold temperature coefficient v gs(th) /t j 4.4 mv/ c drain-to-source on resistance r ds(on) v gs = -10 v i d = -3.0 a 70 95 m v gs = -4.5 v i d = -1.5 a 120 165 forward transconductance g fs v ds = -1.5 v, i d = -3.0 a 5.0 s charges, capacitances and gate resistance input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = -10 v 280 360 pf output capacitance c oss 80 110 reverse transfer capacitance c rss 52 80 total gate charge q g(tot) v gs = -4.5 v, v ds = -10 v, i d = -3.0 a 2.8 4.2 nc threshold gate charge q g(th) 0.4 gate-to-source charge q gs 1.1 gate-to-drain charge q gd 1.1 total gate charge q g(tot) v gs = -10 v, v ds = -10 v, i d = -3.0 a 5.8 8.8 nc switching characteristics (note 4) turn-on delay time t d(on) v gs = -10 v, v ds = -10 v, i d = -1.0 a, r g = 6.0 7.2 15 ns rise time t r 12 24 turn-off delay time t d(off) 18 36 fall time t f 2.6 6.0 drain-to-source characteristics forward diode voltage v sd v gs = 0 v i d = -1.3 a t j = 25 c -0.8 -1.0 v t j = 125 c 0.7 ns reverse recovery time t rr v gs = 0 v, d is /d t = 100 a/ s, i s = -1.3 a 12.8 charge time t a 10 discharge time t b 2.8 reverse recovery time q rr 7.4 nc
NTMD4184PF http://onsemi.com 3 electrical characteristics (t j = 25 c unless otherwise noted) characteristic unit max typ min test condition symbol schottky diode electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min typ max unit maximum instantaneous forward voltage v f i f = 1.0 a t j = 25 c 0.43 0.50 v t j = 125 c 0.35 0.39 i f = 2.0 a t j = 25 c 0.5 0.58 t j = 125 c 0.45 0.53 maximum instantaneous reverse current i r v r = 10 v t j = 25 c 0.001 0.02 ma t j = 125 c 1.2 14 v r = 20 v t j = 25 c 0.004 0.05 t j = 125 c 2.0 18 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures. typical characteristics figure 1. on-region characteristics figure 2. transfer characteristics v ds , drain-to-source voltage (v) v gs , gate-to-source voltage (v) 10 8 6 4 2 0 0 2 4 6 8 10 6 5 4 3 2 1 0 0 2 4 6 8 10 figure 3. on-resistance vs. gate voltage figure 4. on-resistance vs. drain current and gate voltage v gs , gate-to-source voltage (v) i d , drain current (a) 10 8 6 4 2 0.05 0.10 0.15 0.20 0.25 0.30 9 8 7 6 5 4 3 2 0.05 0.10 0.15 0.20 0.25 i d , drain current (a) i d , drain current (a) r ds(on) , drain-to-source resistance ( ) v gs = 4.5 v 10 v t j = 25 c 4.2 v 3.8 v 3.6 v 3.4 v 3.2 v 4.0 v 5.0 v 3.0 v 2.8 v v ds 10 v t j = 25 c t j = 125 c t j = -55 c id = 3 a t j = 25 c r ds(on) , drain-to-source resistance ( ) v gs = 4.5 v t j = 25 c v gs = 10 v 2.6 v
NTMD4184PF http://onsemi.com 4 typical characteristics figure 5. on-resistance variation with temperature figure 6. drain-to-source leakage current vs. voltage t j , junction temperature ( c) v ds , drain-to-source voltage (v) 125 100 75 50 25 0 -25 -50 0.6 0.7 0.9 1.0 1.2 1.3 1.5 1.6 30 25 20 15 10 5 0 10 100 1000 10,000 figure 7. capacitance variation figure 8. gate-to-source and drain-to-source voltage vs. total charge drain-to-source voltage (v) q g , total gate charge (nc) 25 20 15 10 5 0 0 50 100 150 250 300 350 400 6 5 4 3 2 1 0 0 2 4 6 8 10 figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current r g , gate resistance ( ) v sd , source-to-drain voltage (v) 100 10 1 1 10 100 1.0 0.8 0.6 0.4 0.2 0 0 0.5 1.0 1.5 2.0 2.5 3.0 r ds(on) , drain-to-source resistance (normalized) i dss , leakage (na) c, capacitance (pf) v gs , gate-to-source voltage (v) t, time (ns) i s , source current (a) 150 0.8 1.1 1.4 id = 3 a v gs = 10 v t j = 125 c v gs = 0 v t j = 150 c 200 t j = 25 c c iss c oss c rss t j = 25 c id = 3 a q2 q1 v gs qt v dd = 15 v id = 1.0 a v gs = 10 v t d(off) t d(on) t r t f v gs = 0 v t j = 25 c v gs = 0 v
NTMD4184PF http://onsemi.com 5 typical characteristics figure 11. thermal response - r ja at steady state (min pad) pulse time (sec) 1000 100 10 1 0.01 0.1 1 10 1000 figure 12. thermal response - r ja at steady state (1 inch sq pad) figure 13. typical forward voltage figure 14. maximum forward voltage v f , instantaneous forward voltage (v) 1.5 1.3 1.1 0.9 0.7 0.5 0.3 0.1 0.1 1 10 100 r(t) ( c/w) i f , instantaneous forward current (a) 0.1 0.01 0.001 0.0001 0.00001 0.000001 0.0000001 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 pulse time (sec) 1000 100 10 1 0.001 0.01 0.1 1 10 100 r(t) ( c/w) 0.1 0.01 0.001 0.0001 0.00001 0.000001 0.0000001 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 t j = 25 c t j = 125 c t j = -55 c t j = 85 c v f , maximum instantaneous forward voltage (v) 1.5 1.3 1.1 0.9 0.7 0.5 0.3 0.1 0.1 1 10 100 i f , instantaneous forward current (a) t j = 25 c t j = 125 c t j = 85 c 100
NTMD4184PF http://onsemi.com 6 typical characteristics figure 15. typical reverse current figure 16. maximum reverse current v r , reverse voltage (v) 20 10 0 100e-9 1e-6 10e-6 100e-6 1e-3 10e-3 100e-3 figure 17. capacitance v r , reverse voltage (v) 25 20 15 10 5 0 10 100 1000 i r , reverse current (a) c, capacitance (pf) v r , reverse voltage (v) 20 10 0 100e-9 1e-6 10e-6 100e-6 1e-3 10e-3 100e-3 i r , maximum reverse current (a) t j = 25 c t j = 125 c t j = 85 c t j = 25 c t j = 125 c t j = 85 c t j = 25 c
NTMD4184PF http://onsemi.com 7 package dimensions soic-8 nb case 751-07 issue ah seating plane 1 4 5 8 n j x 45 k notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. 6. 751-01 thru 751-06 are obsolete. new standard is 751-07. a b s d h c 0.10 (0.004) dim a min max min max inches 4.80 5.00 0.189 0.197 millimeters b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.053 0.069 d 0.33 0.51 0.013 0.020 g 1.27 bsc 0.050 bsc h 0.10 0.25 0.004 0.010 j 0.19 0.25 0.007 0.010 k 0.40 1.27 0.016 0.050 m 0 8 0 8 n 0.25 0.50 0.010 0.020 s 5.80 6.20 0.228 0.244 -x- -y- g m y m 0.25 (0.010) -z- y m 0.25 (0.010) z s x s m 1.52 0.060 7.0 0.275 0.6 0.024 1.270 0.050 4.0 0.155 mm inches scale 6:1 *for additional information on our pb-free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 18: pin 1. anode 2. anode 3. source 4. gate 5. drain 6. drain 7. cathode 8. cathode on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. typical parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including typicals must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800-282-9855 toll free usa/canada japan : on semiconductor, japan customer focus center ?2-9-1 kamimeguro, meguro-ku, tokyo, japan 153-0051 ? phone : 81-3-5773-3850 NTMD4184PF/d fetky and micro8 are registered trademarks of international rectifier corporation. literature fulfillment : ?literature distribution center for on semiconductor ?p.o. box 5163, denver, colorado 80217 usa ? phone : 303-675-2175 or 800-344-3860 toll free usa/canada ? fax : 303-675-2176 or 800-344-3867 toll free usa/canada ? email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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